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Package Marking and Ordering Information
Part Number
SSN1N45BTA
Top Mark
1N45B
Package
TO- 92
Packing Method
AMMO
Reel Size
N/A
Tape Width
N/A
Quantity
2000 units
= 25 C unless otherwise noted.
Electrical Characteristics T
C
o
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 450 V, V GS = 0 V
V DS = 360 V, T C = 125°C
V GS = 50 V, V DS = 0 V
V GS = -50 V, V DS = 0 V
450
--
--
--
--
--
--
0.5
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V DS = V GS , I D = 250 mA
V GS = 10 V, I D = 0.25 A
V DS = 50 V, I D = 0.25 A
2.3
3.5
--
--
3.0
4.2
3.4
0.7
3.7
4.9
4.25
--
V
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
185
29
6.5
240
40
8.5
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 225 V, I D = 0.5 A,
R G = 25 ?
V DS = 360 V, I D = 0.5 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
7.5
21
23
36
6.5
0.9
3.2
25
50
55
80
8.5
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
0.5
4.0
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 0.5 A
V GS = 0 V, I S = 0.5 A,
dI F / dt = 100 A/ μ s
--
--
--
--
102
0.26
1.4
--
--
V
ns
μ C
1. Repetitive Rating : Pulse width limited by maximum junction temperature .
2. L = 75 mH, I AS = 1.6 A, V DD = 50 V, R G = 25 ? , s tarting T J = 25 o C .
3. I SD ≤ 0.5 A, di/dt ≤ 3 00 A/μs, V DD ≤ BV DSS , s tarting T J = 25 o C .
4. Essentially independent of operating temperature .
5 . a) Reference point of the R θ JL is the drain lead .
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment .
(R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance. R θ CA is determined by the user’s board design)
?2002 Fairchild Semiconductor Corporation
SSN1N45B Rev. C 0
2
www.fairchildsemi.com
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